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| Datasheet File OCR Text: |
| ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 50 50 5 150 50 400 125 -65 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SA1015 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=2mA Current Gain Group O Y G L at -VCE=6V, -IC=150mA Collector Base Breakdown Voltage at -IC=100A Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10A Collector Cutoff Current at -VCB=50V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Saturation Voltage at -IC=100mA, -IB=10mA Gain Bandwidth Product at -VCE=10V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.1mA at f=100Hz, RS=10K NF 0.5 6 dB COB 4 7 pF fT 80 MHz -VBE(sat) 1.1 V -VCE(sat) 0.1 0.3 V -IEBO 0.1 A -ICBO 0.1 A -V(BR)EBO 5 V -V(BR)CEO 50 V -V(BR)CBO 50 V hFE hFE hFE hFE hFE 70 120 200 350 25 140 240 400 700 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 |
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